| PART |
Description |
Maker |
| M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns
1-Mbit (64Kb x16) UV EPROM, 120ns
1-Mbit (64Kb x16) UV EPROM, 150ns
1-Mbit (64Kb x16) UV EPROM, 200ns
1-Mbit (64Kb x16) UV EPROM, 35ns
1-Mbit (64Kb x16) UV EPROM, 45ns
1-Mbit (64Kb x16) UV EPROM, 55ns
1-Mbit (64Kb x16) UV EPROM, 70ns
1-Mbit (64Kb x16) UV EPROM, 80ns
1-Mbit (64Kb x16) UV EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 120ns
1-Mbit (64Kb x16) OTP EPROM, 70ns
1-Mbit (64Kb x16) OTP EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 55ns
1-Mbit (64Kb x16) OTP EPROM, 45ns
1-Mbit (64Kb x16) OTP EPROM, 35ns
1-Mbit (64Kb x16) OTP EPROM, 150ns
1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8，启动座单电源闪
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器
Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C4002 M27C4002-10B1TR M27C4002-10B1X M27C4002-1 |
Fuses, 750mA 63V T CHIP 1206
Fuses, 5A 125V F CHIP 0603 4兆位存储器的256Kb x16紫外线和OTP存储
4 Mbit 256Kb x16 UV EPROM and OTP EPROM 4兆位存储器的256Kb x16紫外线和OTP存储
CAP 18PF 100V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 100V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1800PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1500PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 1500PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.015UF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 16PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 150PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V256 M27V256-100B1TR M27V256-100B6TR M27V256-10 |
NND - 256 KBIT (32KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
2.5-V/3.3-V 18-Bit Universal Bus Transceiver With 3-State Outputs 56-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Edge-Triggered D-Type Flip-Flops With 3-State Outputs 48-TSSOP -40 to 85 256千位2KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V.
http://
ST Microelectronics
|
| M27V101 M27V101-100B1TR M27V101-100B6TR M27V101-10 |
1-Bit to 2-Bit Address Driver With 3-State Outputs 80-TSSOP -40 to 85
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TVSOP -40 to 85
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V101 |
NND - 1 MBIT (128KB X8) LOW VOLTAGE UV EPROM & OTP EPROM
|
ST Microelectronics
|
| M27W80106 M27W801-200N6TR M27W801 M27W801-100B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
